Silane and borane treatments for titanium carbide films
US8841182B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film including titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that includes titanium and at least one halide ligand, a second source chemical that includes metal and carbon, where the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, where the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. The treatment can form a capping layer on the metal carbide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.