High density bulk fin capacitor
US8841185B2 · kind B2 · utility
29Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2012 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Oct 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
Abstract
A high density bulk fin capacitor is disclosed. Fin capacitors are formed near finFETs by further etching the fin capacitors to provide more surface area, resulting in increased capacitance density. Embodiments of the present invention include depletion-mode varactors and inversion-mode varactors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.