Fast-switching word line driver
US8842489B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2012 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Oct 16, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4085
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A word line driver of a semiconductor memory includes logic circuitry for coupling a word line to a first node set at a first voltage level when the word line driver is in a first state or to a second node set at a second voltage level when the word line driver is in a second state. A capacitor is configured to be charged to a third voltage level that is greater than the first and second voltage levels. First and second transistors are configured to selectively couple the word line to the capacitor and to a third node set at a fourth voltage level when the word line driver is in a third state. The fourth voltage level is greater than the first voltage level and less than the second voltage level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.