Methods of forming three dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates
US8842945B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2011 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Oct 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Three dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling a waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.