Smoothing agents to enhance nucleation density in thin film chemical vapor deposition
US8846146B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2011 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Oct 31, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides methods for making structures, including nanosized and microsized thin film structures that exhibit a high degree of smoothness useful for applications in microelectronics. Deposition processing of the invention utilize smoothing agents capable of selectively adjusting the relative rates of processes involved in thin film formation and growth to access enhanced nucleation densities resulting in smooth thin film structures, including ultrathin (e.g., <10 nm) smooth films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.