Methods for depositing metal in high aspect ratio features
US8846451B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2011 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Dec 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3327
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.