Forming a diffusion break during a RMG process
US8846491B1 · kind B1 · utility
84Cited by
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20Claims
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Key dates
| Filing date | Jun 19, 2013 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Jun 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments herein provide approaches for forming a diffusion break during a replacement metal gate process. Specifically, a semiconductor device is provided with a set of replacement metal gate (RMG) structures over a set of fins patterned from a substrate; a dielectric material over an epitaxial junction area; an opening formed between the set of RMG structures and through the set of fins, wherein the opening extends through the dielectric material, the expitaxial junction area, and into the substrate; and silicon nitride (SiN) deposited within the opening to form the diffusion break.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.