GaN on Si(100) substrate using epi-twist
US8846504B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2013 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Nov 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02609
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing GaN material on a silicon substrate includes providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10° offset surface orientation and using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate. The single crystal stress managing layer includes rare earth oxide with a (110) crystal orientation and a cubic crystal structure. The method further includes epitaxially growing a single crystal buffer layer on the stress managing layer. The single crystal buffer layer includes rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer. Epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material having one of a (11-20) crystal orientation and a (0001) crystal orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.