Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill

US8846513B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Peter Baars · Dresden, DE
• Richard J. Carter · Los Altos, US
• Rolf Stephan · Dresden, DE

Key dates

• Filing date: Sep 23, 2011
• Grant date: Sep 30, 2014
• Expiry date: Jan 19, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/797
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

When forming self-aligned contact elements in sophisticated semiconductor devices in which high-k metal gate electrode structures are to be provided on the basis of a replacement gate approach, the self-aligned contact openings are filled with an appropriate fill material, such as polysilicon, while the gate electrode structures are provided on the basis of a placeholder material that can be removed with high selectivity with respect to the sacrificial fill material. In this manner, the high-k metal gate electrode structures may be completed prior to actually filling the contact openings with an appropriate contact material after the removal of the sacrificial fill material. In one illustrative embodiment, the placeholder material of the gate electrode structures is provided in the form of a silicon/germanium material.