Method and apparatus for ultra thin wafer backside processing
US8846532B2 · kind B2 · utility
8Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Sep 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for ultra thin wafer backside processing are disclosed. The apparatus includes an outer ring holding a high temperature grinding and/or dicing tape to form a support structure. An ultra thin wafer or diced wafer is adhered to the tape within the ring for wafer backside processing. The wafer backside processing includes ion implantation, annealing, etching, sputtering and evaporation while the wafer is in the support structure. Alternative uses of the support structure are also disclosed including the fabrication of dies having metalized side walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.