Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same
US8847173B2 · kind B2 · utility
3Cited by
1References
9Claims
0Family size
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Key dates
| Filing date | Jul 13, 2011 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Jul 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0807
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.