Method of forming anneal-resistant embedded resistor for non-volatile memory application
US8847187B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 3, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Dec 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.