Method for depositing tungsten film with low roughness and low resistivity
US8853080B2 · kind B2 · utility
37Cited by
115References
19Claims
0Family size
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Key dates
| Filing date | Oct 2, 2012 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Oct 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of producing low resistivity tungsten bulk layers having low roughness and associated apparatus are provided. According to various embodiments, the methods involve CVD deposition of tungsten at high pressures and/or high temperatures. In some embodiments, the CVD deposition occurs in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.