CMOS devices with stressed channel regions, and methods for fabricating the same
US8853746B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2006 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Mar 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0188
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to improved complementary metal-oxide-semiconductor (CMOS) devices with stressed channel regions. Specifically, each improved CMOS device comprises an field effect transistor (FET) having a channel region located in a semiconductor device structure, which has a top surface oriented along one of a first set of equivalent crystal planes and one or more additional surfaces oriented along a second, different set of equivalent crystal planes. Such additional surfaces can be readily formed by crystallographic etching. Further, one or more stressor layers with intrinsic compressive or tensile stress are located over the additional surfaces of the semiconductor device structure and are arranged and constructed to apply tensile or compressive stress to the channel region of the FET. Such stressor layers can be formed by pseudomorphic growth of a semiconductor material having a lattice constant different from the semiconductor device structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.