Ion implanted and self aligned gate structure for GaN transistors
US8853749B2 · kind B2 · utility
7Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2012 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Jan 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.