Semiconductor structure having aluminum layer with high reflectivity
US8860135B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2012 |
| Grant date | Oct 14, 2014 |
| Priority date | — |
| Expiry date | Feb 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer. The present invention further provides a semiconductor device having an aluminum layer with a reflectivity greater than 1, wherein the semiconductor device is formed by using the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.