Methods of forming capacitors
US8865544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2012 |
| Grant date | Oct 21, 2014 |
| Priority date | — |
| Expiry date | Nov 16, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.