Patent · US Active

Silicided semiconductor structure and method of forming the same

US8865592B2 · kind B2 · utility

0Cited by

3References

4Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jiang Yan · Beijing, CN
Henning Haffner · Pawling, US
Frank Huebinger · Poughkeepsie, US
Sunoo Kim · Hopewell Junction, US
Richard Lindsay · Beacon, US
Klaus Schruefer · Baldham, DE

Key dates

Filing date	Feb 3, 2009
Grant date	Oct 21, 2014
Priority date	—
Expiry date	Oct 22, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/667
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.