Method of forming an asymmetric MIMCAP or a schottky device as a selector element for a cross-bar memory array
US8871621B2 · kind B2 · utility
3Cited by
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7Claims
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Key dates
| Filing date | Dec 20, 2012 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Jan 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a low defect dielectric layer, a high defect dielectric layer, sandwiched between two electrodes having different work function values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.