Emission tuning methods and devices fabricated utilizing methods

US8877524B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Ashay Chitnis · Goleta, US
• John Edmond · Durham, US
• Jeffrey Carl Britt · Cary, US
• Bernd Keller · Lompoc, US
• David T. Emerson · Durham, US
• Michael John Bergmann · Atlanta, US
• Jasper Cabalu · Cary, US

Key dates

• Filing date: Mar 30, 2009
• Grant date: Nov 4, 2014
• Expiry date: Mar 30, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T408/47

Abstract

A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.