Method for manufacturing bonded substrate having an insulator layer in part of bonded substrate
US8877609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Apr 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.