Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom

US8877619B1 · kind B1 · utility

Assignee

• SuVolta, Inc. · US

Inventors

• Scott E. Thompson · Gainesville, US
• Lucian Shifren · San Jose, US
• Pushkar Ranade · Los Gatos, US
• Lance Scudder · Sunnyvale, US
• Dalong Zhao · San Jose, US
• Teymur Bakhisher · San Jose, US
• Sameer Pradhan · Campbell, US

Key dates

• Filing date: Jan 23, 2013
• Grant date: Nov 4, 2014
• Expiry date: Jan 23, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0167

Abstract

Structures and processes are provided that can be used for effectively integrating different transistor designs across a process platform. In particular, a bifurcated process is provided in which dopants and other processes for forming some transistor types may be performed prior to STI or other device isolation processes, and other devices may be formed thereafter. Thus, doping and other steps and their sequence with respect to the STI process can be selected to be STI-first or STI-last, depending on the device type to be manufactured, the range of device types that are manufactured on the same wafer or die, or the range of device types that are planned to be manufactured using the same or similar mask sets.