Pulsed plasma to affect conformal processing

US8877654B2 · kind B2 · utility

Assignee

• Varian Semiconductor Equipment Associates, Inc. · US

Inventors

• Helen L. Maynard · North Reading, US
• Vikram Singh · North Andover, US
• Svetlana B. Radovanov · Marblehead, US
• Harold Persing · Westbrook, US

Key dates

• Filing date: Apr 15, 2010
• Grant date: Nov 4, 2014
• Expiry date: Jul 30, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0241
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.