High efficiency group III nitride LED with lenticular surface
US8878209B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Feb 19, 2014 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Feb 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.
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