Semiconductor device including outwardly extending source and drain silicide contact regions and related methods
US8878300B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 18, 2013 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Sep 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
Abstract
A method for making a semiconductor device may include forming a plurality of semiconductor fins on a substrate, forming a gate overlying the plurality of semiconductor fins, forming respective unmerged semiconductor regions on the semiconductor fins on opposing sides of the gate, and forming a dielectric layer overlying the unmerged semiconductor regions. The method may further include etching the dielectric layer to define contact recesses having recess bottoms exposing the unmerged semiconductor regions, forming a respective semiconductor layer on each of the exposed unmerged semiconductor regions to extend outwardly from adjacent portions of the recess bottom, and siliciding each of the semiconductor layers to define respective source and drain contacts extending outwardly from adjacent portions of the recess bottom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.