Integrated high voltage divider
US8878330B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Aug 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit containing a voltage divider having an upper resistor of unsilicided gate material over field oxide around a central opening and a drift layer under the upper resistor, an input terminal coupled to an input node of the upper resistor adjacent to the central opening in the field oxide and coupled to the drift layer through the central opening, a sense terminal coupled to a sense node on the upper resistor opposite from the input node, a lower resistor with a sense node coupled to the sense terminal and a reference node, and a reference terminal coupled to the reference node. A process of forming the integrated circuit containing the voltage divider.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.