Patent · US Active

Integrated high voltage divider

US8878330B2 · kind B2 · utility

3Cited by
0References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 6, 2012
Grant dateNov 4, 2014
Priority date
Expiry dateAug 6, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/266
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit containing a voltage divider having an upper resistor of unsilicided gate material over field oxide around a central opening and a drift layer under the upper resistor, an input terminal coupled to an input node of the upper resistor adjacent to the central opening in the field oxide and coupled to the drift layer through the central opening, a sense terminal coupled to a sense node on the upper resistor opposite from the input node, a lower resistor with a sense node coupled to the sense terminal and a reference node, and a reference terminal coupled to the reference node. A process of forming the integrated circuit containing the voltage divider.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.