EUV lithography device and method for processing an optical element

US8885141B2 · kind B2 · utility

Assignee

• Carl Zeiss SMT GmbH · DE

Inventors

• Wolfgang Singer · Aalen, DE
• Yim-Bun Patrick Kwan · Aalen, DE
• Stefan Schmidt · Aalen, DE
• Dirk Heinrich Ehm · Beckingen, DE
• Dieter Kraus · Munich, DE
• Stefan Wiesner · Lauchheim, DE
• Stefan Koehler · Eppelheim, DE
• Almut Czap · Aalen, DE
• Hin Yiu Anthony Chung · Blaustein, DE

Key dates

• Filing date: Apr 15, 2011
• Grant date: Nov 11, 2014
• Expiry date: Feb 17, 2033

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/82
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) includes a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.