Bit line current trip point modulation for reading nonvolatile storage elements
US8885416B2 · kind B2 · utility
12Cited by
20References
29Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 30, 2013 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Jan 30, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Upon selecting non-volatile storage elements to be sensed, the system obtains information about the position of these non-volatile storage elements, determines sensing parameters based at least in part on this information, pre-charges a charge storage device and, while maintaining the voltage level of the bit lines of these memory cells at a constant value, applies a reference signal to these non-volatile storage elements for a certain duration of time, afterwards determining whether, for the certain duration of time, the current conducted by these non-volatile storage elements exceeds a predetermined value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.