Double sidewall image transfer process
US8889561B2 · kind B2 · utility
39Cited by
29References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Dec 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methodology enabling a generation of fins having a variable fin pitch less than 40 nm, and the resulting device are disclosed. Embodiments include: forming a hardmask on a substrate; providing first and second mandrels on the hardmask; providing a first spacer on each side of each of the first and second mandrels; removing the first and second mandrels; providing, after removal of the first and second mandrels, a second spacer on each side of each of the first spacers; and removing the first spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.