Programmable memory elements, devices and methods having physically localized structure
US8895953B1 · kind B1 · utility
9Cited by
6References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 10, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jul 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A programmable memory element can include an insulating layer formed over a bottom structure; an opening formed in the insulating layer; a sidewall structure formed next to side surfaces of the opening; a tapered structure formed within the opening adjacent to the sidewall structure; and a solid electrolyte forming at least a portion of a structure selected from: the bottom structure, the sidewall structure, and the tapered structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.