Method and apparatus for producing large, single-crystals of aluminum nitride
US8896020B2 · kind B2 · utility
13Cited by
1References
16Claims
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Key dates
| Filing date | Aug 23, 2013 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Aug 23, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.