In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
US8900471B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2010 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Feb 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.