Method for removing bumps from incomplete and defective interposer dies for stacked silicon interconnect technology (SSIT) devices
US8900987B1 · kind B1 · utility
1Cited by
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19Claims
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Key dates
| Filing date | Oct 4, 2013 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Oct 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing bumps from incomplete interposer die(s) and/or defective interposer die(s) of an interposer wafer is described. The method includes forming bumps on an interposer wafer; identifying at least one incomplete interposer die and/or at least one defective interposer die of the interposer wafer; and removing bumps from the at least one incomplete interposer die and/or the at least one defective interposer die of the interposer wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.