Write scheme for charge trapping memory
US8902647B1 · kind B1 · utility
12Cited by
15References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2014 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | May 28, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a charge trapping memory, data that would otherwise be likely to remain adjacent to unwritten word lines is written three times, along three immediately adjacent word lines. The middle copy is protected from charge migration on either side and is considered a safe copy for later reading. Dummy data may be programmed along a number of word lines to format a block for good data retention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.