Confined defect profiling within resistive random memory access cells
US8913418B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 10, 2013 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | May 12, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.