Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction
US8923039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A mechanism is provided for storing multiple bits in a domain wall nanowire magnetic junction device. The multiple bits are encoded based on a resistance of the domain wall nanowire magnetic junction device using a single domain wall. The single domain wall is shifted to change the resistance of the domain wall nanowire magnetic junction device to encode a selected bit. The resistance is checked to ensure that it corresponds to a preselected resistance for the selected bit. Responsive to the resistance corresponding to the preselected resistance for the selected bit, the selected bit is stored. Responsive to the resistance not being the preselected resistance for the selected bit, the single domain wall is shifted until the resistance corresponds to the preselected resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.