Luc Thomas
38Patents
9h-index
31Co-inventors
75Inventor score
Filing activity: Jul 11, 1979 → Jan 24, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6166948A | Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers | Electricity | 253 | Expired |
| US9466319B1 | Perpendicular magnetic recording (PMR) write shield design with minimized wide adjacent track erasure (WATE) | Physics | 80 | Active |
| US8687415B2 | Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces | Electricity | 37 | Active |
| US9425387B1 | Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing | Electricity | 35 | Active |
| US7626844B1 | Magnetic racetrack with current-controlled motion of domain walls within an undulating energy landscape | Emerging Cross-Sectional Technologies | 21 | Active |
| US4285044A | Digital generator for producing a sinewave | Physics | 20 | Expired |
| US10014465B1 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Electricity | 14 | Active |
| US7667994B1 | Magnetic racetrack with current-controlled motion of domain walls within an undulating energy landscape | Emerging Cross-Sectional Technologies | 12 | Active |
| US10522746B1 | Dual magnetic tunnel junction devices for magnetic random access memory (MRAM) | Physics | 11 | Active |
| US10797225B2 | Dual magnetic tunnel junction (DMTJ) stack design | Electricity | 9 | Active |
| US7760535B2 | Sequence of current pulses for depinning magnetic domain walls | Emerging Cross-Sectional Technologies | 5 | Active |
| US7492622B2 | Sequence of current pulses for depinning magnetic domain walls | Emerging Cross-Sectional Technologies | 5 | Active |
| US10475564B2 | Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation | Electricity | 4 | Active |
| US11264560B2 | Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications | Electricity | 3 | Active |
| US8934289B2 | Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction | Emerging Cross-Sectional Technologies | 3 | Active |
| US10658577B2 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Electricity | 3 | Active |
| US8923039B2 | Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction | Emerging Cross-Sectional Technologies | 2 | Active |
| US10115892B2 | Multilayer structure for reducing film roughness in magnetic devices | Electricity | 2 | Active |
| US8638601B1 | Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces | Physics | 1 | Active |
| US11264566B2 | Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio | Electricity | 1 | Active |
| US10754000B2 | Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films | Physics | 1 | Active |
| US10788561B2 | Method for measuring saturation magnetization of magnetic films and multilayer stacks | Physics | 1 | Active |
| US10950782B2 | Nitride diffusion barrier structure for spintronic applications | Electricity | 1 | Active |
| US11683994B2 | Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio | Electricity | 0 | Active |
| US12356865B2 | Multilayer structure for reducing film roughness in magnetic devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.