Deposition of metal films using alane-based precursors

US8927059B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Xinliang Lu · Fremont, US
• David Thompson · San Jose, US
• Jeffrey W. Anthis · San Jose, US
• Mei Chang · San Jose, US
• Seshadri Ganguli · Sunnyvale, US
• Wei V. Tang · Santa Clara, US
• Srinivas Gandikota · Santa Clara, US
• Atif Noori · Saratoga, US

Key dates

• Filing date: Nov 6, 2012
• Grant date: Jan 6, 2015
• Expiry date: Nov 30, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76841
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by:wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR′2)4 or Ta(NR′2)5, wherein R′ is an alkyl, alkenyl, alkynyl, keto or aldehyde group.