Apparatus and methods for forming a memory cell using charge monitoring
US8929125B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2013 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Apr 21, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0083
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatuses and methods of forming a memory cell is described. In one such method, a forming charge applied to a memory cell, such as a Resistive RAM (RRAM) memory cell, is monitored to determine the progress of the forming the cell. If the cell is consuming charge too slowly, a higher voltage can be applied. If the cell is consuming charge too quickly, a lower voltage can be applied. The charge may be monitored by charging a capacitor to a certain level, then monitoring the discharge rate of the capacitor though the cell. The monitoring may use comparators to measure the charge. The monitoring may also use an analog to digital converter to perform the monitoring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.