Vapor deposition methods of SiCOH low-k films
US8932674B2 · kind B2 · utility
2Cited by
33References
17Claims
0Family size
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Key dates
| Filing date | Feb 17, 2011 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Jul 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are precursors that are adapted to deposit SiCOH films with dielectric constant and Young's Modulus suitable for future generation dielectric films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.