FinFET with self-aligned punchthrough stopper

US8932918B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Balasubramanian S. Haran · Watervliet, US
• Shom Ponoth · Irvine, US
• Theodorus E. Standaert · Clifton Park, US
• Tenko Yamashita · Schenectady, US

Key dates

• Filing date: Aug 29, 2012
• Grant date: Jan 13, 2015
• Expiry date: Nov 24, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/832

Abstract

A finFET with self-aligned punchthrough stopper and methods of manufacture are disclosed. The method includes forming spacers on sidewalls of a gate structure and fin structures of a finFET device. The method further includes forming a punchthrough stopper on exposed sidewalls of the fin structures, below the spacers. The method further includes diffusing dopants from the punchthrough stopper into the fin structures. The method further includes forming source and drain regions adjacent to the gate structure and fin structures.