Methods of self-forming barrier integration with pore stuffed ULK material
US8932934B2 · kind B2 · utility
4Cited by
13References
13Claims
0Family size
Assignee
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Key dates
| Filing date | May 28, 2013 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Aug 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is provided for methods of reducing contamination of the self-forming barrier of an ultra-low k layer during semiconductor fabrication. In one aspect, a method includes: providing a cured ultra-low k film which contains at least one trench, and the pores of the film are filled with a pore-stuffing material; removing exposed pore-stuffing material at the surface of the trench to form exposed pores; and forming a self-forming barrier layer on the surface of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.