Inductively coupled plasma source with phase control
US8933628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2012 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Dec 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/4652
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus may include a process chamber having an interior processing volume; a first RF coil to couple RF energy into the processing volume; a second RF coil to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil; and a third RF coil to couple RF energy into the processing volume, the third RF coil disposed coaxially with respect to the first RF coil, wherein when RF current flows through the each of the RF coils, either the RF current flows out-of-phase through at least one of the RF coils with respect to at least another of the RF coils, or the phase of the RF current may be selectively controlled to be in-phase or out-of-phase in at least one of the RF coils with respect to at least another of the RF coils.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.