Semiconductor device and method of singulating semiconductor wafer along modified region within non-active region formed by irradiating energy through mounting tape
US8936969B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2012 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Jun 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor wafer with a plurality of semiconductor die separated by a non-active region. The semiconductor die can be circular or polygonal with three or more sides. A plurality of bumps is formed over the semiconductor die. A portion of semiconductor wafer is removed to thin the semiconductor wafer. A wafer ring is mounted to mounting tape. The semiconductor wafer is mounted to the mounting tape within the wafer ring. The mounting tape includes translucent or transparent material. A penetrable layer is applied over the bumps formed over the semiconductor wafer. An irradiated energy from a laser is applied through the mounting tape to the non-active region to form a modified region within the non-active region. The semiconductor wafer is singulated along the modified region to separate the semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.