Extending flash memory data retension via rewrite refresh
US8938655B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2007 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Mar 21, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3431
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Providing for extended data retention of flash memory devices by program state rewrite is disclosed herein. By way of example, a memory cell or group of memory cells can be evaluated to determine a program state of the cell(s). If the cell(s) is in a program state, as opposed to a natural or non-programmed state, a charge level, voltage level and/or the like can be rewritten to a default level associated with the program state, without erasing the cell(s) first. Accordingly, conventional mechanisms for refreshing cell program state that require rewriting and erasing, typically degrading storage capacity of the memory cell, can be avoided. As a result, data stored in flash memory can be refreshed in a manner that mitigates loss of memory integrity, providing substantial benefits over conventional mechanisms that can degrade memory integrity at a relatively high rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.