Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness
US8940554B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Jan 27, 2012 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Feb 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness includes: measuring a thickness of a semiconductor-on-insulator (SOI) layer at a plurality of locations; determining a removal thickness at each of the plurality of locations; and implanting ions at the plurality of locations. The implanting is dynamically based on the removal thickness at each of the plurality of locations. The method further includes oxidizing the SOI layer to form an oxide layer, and removing the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.