Sequential precursor dosing in an ALD multi-station/batch reactor
US8940646B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2013 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Dec 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67207
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed herein are methods of depositing layers of material on multiple semiconductor substrates at multiple processing stations within one or more reaction chambers. The methods may include dosing a first substrate with film precursor at a first processing station and dosing a second substrate with film precursor at a second processing station with precursor flowing from a common source, wherein the timing of said dosing is staggered such that the first substrate is dosed during a first dosing phase during which the second substrate is not substantially dosed, and the second substrate is dosed during a second dosing phase during which the first substrate is not substantially dosed. Also disclosed herein are apparatuses having a plurality of processing stations contained within one or more reaction chambers and a controller with machine-readable instructions for staggering the dosing of first and second substrates at first and second processing stations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.