Method and apparatus for plasma dicing a semi-conductor wafer
US8946058B2 · kind B2 · utility
0Cited by
4References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2013 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Apr 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68327
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for plasma dicing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing a work piece onto the work piece support, said work piece having a support film, a frame and the substrate; loading the work piece onto the work piece support; applying a tensional force to the support film; clamping the work piece to the work piece support; generating a plasma using the plasma source; and etching the work piece using the generated plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.