Semiconductor devices having through-contacts and related fabrication methods

US8951907B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ralf Richter · Dresden, DE
• Jens Heinrich · Radeberg, DE
• Holger Schuehrer · Dresden, DE

Key dates

• Filing date: Dec 14, 2010
• Grant date: Feb 10, 2015
• Expiry date: May 14, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a layer of dielectric material overlying a doped region formed in a semiconductor substrate adjacent to a gate structure and forming a conductive contact in the layer of dielectric material. The conductive contact overlies and electrically connects to the doped region. The method continues by forming a second layer of dielectric material overlying the conductive contact, forming a voided region in the second layer overlying the conductive contact, forming a third layer of dielectric material overlying the voided region, and forming another voided region in the third layer overlying at least a portion of the voided region in the second layer. The method continues by forming a conductive material that fills both voided regions to contact the conductive contact.