Semiconductor device comprising a buried poly resistor

US8962420B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Andreas Kurz · Oberursel, DE
• Roman Boschke · Dresden, DE
• James F. Buller · Austin, US
• Andy Wei · Queensbury, US

Key dates

• Filing date: Sep 3, 2009
• Grant date: Feb 24, 2015
• Expiry date: May 10, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

An embedded or buried resistive structure may be formed by amorphizing a semiconductor material and subsequently re-crystallizing the same in a polycrystalline state, thereby providing a high degree of compatibility with conventional polycrystalline resistors, such as polysilicon resistors, while avoiding the deposition of a dedicated polycrystalline material. Hence, polycrystalline resistors may be advantageously combined with sophisticated transistor architectures based on non-silicon gate electrode materials, while also providing high performance of the resistors with respect to the parasitic capacitance.